Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters

Kawasaki, Japan:   Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed “X5M007E120,” a bare die[1] 1200V silicon carbide (SiC) MOSFET

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Toshiba’s 1200V Additions to its Lineup of Third-Generation SiC Schottky Barrier Diodes Will Contribute to High Efficiency in Industrial Power Equipment

Kawasaki, Japan:   Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added the “TRSxxx120Hx Series” of 1200V products to its lineup

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